smd type smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK3507 features 4.5 v drive available low on-state resistance r ds(on)1 =45m max. (v gs =10v,i d =11a) low gate charge q g = 8.5 nc typ. (v dd =24v,v gs =10v,i d =22a) built-in g-s protection diode surface mount package available absolute maximum ratings ta = 25 parameter symbol rating unit draintosourcevoltage v dss 30 v gate to source voltage v gss 16 v i d 22 a i dp * 45 a power dissipation t c =25 20 t a =25 1.5 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =30v,v gs =0 10 a gate leakage current i gss v gs = 16v,v ds =0 1 a gate cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.5 v forward transfer admittance y fs v ds =4.0v,i d =11a 6 s r ds(on)1 v gs =10v,i d =11a 28 45 m r ds(on)2 v gs =4.5v,i d =11a 46 76 m input capacitance c iss 360 pf output capacitance c oss 125 pf reverse transfer capacitance c rss 65 pf turn-on delay time t on 6.6 ns rise time t r 3.6 ns turn-off delay time t off 16 ns fall time tf 5.3 ns total gate charge q g 8.5 nc gate to source charge q gs 2nc gate to drain charge q gd 2.1 nc v ds =10v,v gs =0,f=1mhz i d =11a,v gs(on) =10v,r l =10 ,v dd =15v i d =22a, v dd =24v, v gs =10v draintosourceon-stateresistance smd type ic smd type smd type ic smd type smd type smd type product specification 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com
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